The recent discovery of the interfacial perpendicular anisotropy (IPA) in CoFeB/MgO induced by the electrostatic interaction between the Fe of CoFeB and the O of MgO [1] was a milestone in the development of high thermal stability and low critical current density Spin-Transfer-Torque (STT) – MRAM[2]. Indeed, the key advance is the possibility to set the easy axis of the ferromagnet by controlling its thickness, this aspect gave rise to use the geometrical parameters together to the physical ones for the optimization of Magnetic Tunnel Junction (MTJ) proprieties such as Tunneling Magnetoresistance (TMR), critical currents, thermal stability etc. In particular, the two partners of the consortium have already jointly worked on this topic achieving experimentally the largest power[3] and the record-low critical current [4] of STT-oscillators, and the largest sensitivity (detection voltage over input microwave power) of STT-diodes[5]. Concerning the STT-diodes, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts[5]. The physics beyond the STT-diode effect is the excitation of the ferromagnetic resonance via a microwave STT, thus only resonance-type responses have been observed so far. This grant will support theoretical and experimental research for the proof-of-concept of a new category of SST-diodes characterized by a broadband detection in the frequency range from hundreds of MHz to few GHz. The theoretical know-how of UNIME and the state-of-the art deposition systems, electron-beam lithography and ion milling techniques in SINANO will be used to build MTJ devices to achieve the broadband detection. We will examine under what conditions broadband detection can be observed, and which is the mechanisms at its basis. This research is directly applicable to improving technologies for microwave detectors.